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GaN-FETs verbessern Leistungsdichte und Wirkungsgrad | DigiKey
GaN-FETs verbessern Leistungsdichte und Wirkungsgrad | DigiKey

GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser
GaN Power Devices: Potential, Benefits, and Keys to Successful Use | Mouser

Trimming the on-resistance of GaN MOSFETs - News
Trimming the on-resistance of GaN MOSFETs - News

How GaN FETs Have Become the Technology of Choice for Audiophiles -  Technical Articles
How GaN FETs Have Become the Technology of Choice for Audiophiles - Technical Articles

So unterscheiden sich GaN- und SiC-Transistoren
So unterscheiden sich GaN- und SiC-Transistoren

So unterscheiden sich GaN- und SiC-Transistoren
So unterscheiden sich GaN- und SiC-Transistoren

Warum GaN Devices den Silizium-Chips überlegen sind
Warum GaN Devices den Silizium-Chips überlegen sind

Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from EPC
Smallest 100 V, 2 mΩ GaN FET in the World is Now Shipping from EPC

Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices
Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices

Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices
Micromachines | Free Full-Text | Vertical GaN MOSFET Power Devices

GaN power devices, Part 1: Principles
GaN power devices, Part 1: Principles

What is a Gallium Nitride, GaN MOSFET » Electronics Notes
What is a Gallium Nitride, GaN MOSFET » Electronics Notes

GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube
GaN FET vs. MOSFET: 150 V – 12 V DC-DC Conversion - YouTube

Simplified enhancement-mode GaN FET structure. The physical structure... |  Download Scientific Diagram
Simplified enhancement-mode GaN FET structure. The physical structure... | Download Scientific Diagram

GaN-Produkte und -Ressourcen für Leistungsanwendungen bei DigiKey | DigiKey
GaN-Produkte und -Ressourcen für Leistungsanwendungen bei DigiKey | DigiKey

Galliumnitrid / Transphorm: Ist GaN wirklich zuverlässig? -  Leistungshalbleiter - Elektroniknet
Galliumnitrid / Transphorm: Ist GaN wirklich zuverlässig? - Leistungshalbleiter - Elektroniknet

EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100  V eGaN FET Family
EPC Increases Benchmark Performance Versus Silicon MOSFETs with Latest 100 V eGaN FET Family

First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon
First' quasi-vertical gallium nitride trench MOSFET on six-inch silicon

Das unterscheidet die Bauelementekonzepte GaN, SiC, Superjunction
Das unterscheidet die Bauelementekonzepte GaN, SiC, Superjunction

Kaskodenbausteine aus Si-MOSFET und SiC-JFET
Kaskodenbausteine aus Si-MOSFET und SiC-JFET

GAN063-650WSAQ Nexperia, Galliumnitrid (GaN)-Transistor, Gan FET, 650 V |  Farnell DE
GAN063-650WSAQ Nexperia, Galliumnitrid (GaN)-Transistor, Gan FET, 650 V | Farnell DE

GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News
GaN FETs: The Technology of Choice for Audiophiles - Power Electronics News

Warum GaN Devices den Silizium-Chips überlegen sind
Warum GaN Devices den Silizium-Chips überlegen sind

Materials | Free Full-Text | Analysis for DC and RF Characteristics  Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator
Materials | Free Full-Text | Analysis for DC and RF Characteristics Recessed-Gate GaN MOSFET Using Stacked TiO2/Si3N4 Dual-Layer Insulator

Toshiba's Cascode GaN Discrete Power Device Realize Stable Operation and  Simplifies System Design with Direct Gate Drive | Toshiba Electronic  Devices & Storage Corporation | Asia-English
Toshiba's Cascode GaN Discrete Power Device Realize Stable Operation and Simplifies System Design with Direct Gate Drive | Toshiba Electronic Devices & Storage Corporation | Asia-English