3004K1T-CA: Infrarot-Diode, GaAS, 850 nm, 30°, 3 mm, 10-40mW - sr bei reichelt elektronik
Applied Sciences | Free Full-Text | Development of 340-GHz Transceiver Front End Based on GaAs Monolithic Integration Technology for THz Active Imaging Array
Optimization of broad-area GaAs diode lasers for high powers and high efficiencies in the temperature range 200-220 K (Band 49) – Cuvillier Verlag
Indium-Gallium-Arsenid (InGaAs) Diode | Wie es funktioniert, Anwendung & Vorteile
Electrical and photoelectrical characteristics of Au/GaN/GaAs Schottky diode - ScienceDirect
Millimeter-wave and Microwave GaAs Diodes | Keysight
High Speed GaAs Schottky Diodes - IXYS - PDF Catalogs | Technical Documentation | Brochure
Schematic diagram of the GaAs Gunn diode. | Download Scientific Diagram
GaAs Schottky Diodes Allow Higher Power Density - EEWeb
3. III-V compound semiconductor material systems
GaAs-Laserdioden | Ferdinand-Braun-Institut
Parameters for TSKS5400 GaAs diode | Download Table
Current-voltage characteristics of Co/n-GaAs Schottky diode in the... | Download Scientific Diagram
I-V characteristics for a Ag/S:GaAs(001) diode (a) and for... | Download Scientific Diagram
Gunn effect - GaAs diode - Microwave Engineering - UNIT VI - YouTube
Gallium arsenide - Wikipedia
Sensors | Free Full-Text | Dual-Functional On-Chip AlGaAs/GaAs Schottky Diode for RF Power Detection and Low-Power Rectenna Applications
Indium gallium arsenide laser diode on exact germanium-on-silicon substrate
Forward characteristics of 3.1 x 3.1 mm 2 GaAs pin diodes, rated 600 V | Download Scientific Diagram
Improvements in reverse breakdown characteristics of THz GaAs Schottky barrier varactor based on metal-brim structure
3-5 Power Electronics“: Hochvolt-Dioden aus Galliumarsenid nun serienreif - Oiger
Gunn Effect (GaAS) Diode - Transferred Electron Devices - Microwave Engineering - YouTube
